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@ARTICLE{Luong:844953,
      author       = {Luong, Gia Vinh and Strangio, S. and Tiedemann, Andreas and
                      Bernardy, P. and Trellenkamp, Stefan and Palestri, P. and
                      Mantl, S. and Zhao, Q. T.},
      title        = {{S}trained {S}ilicon {C}omplementary {TFET} {SRAM}:
                      {E}xperimental {D}emonstration and {S}imulations},
      journal      = {IEEE journal of the Electron Devices Society},
      volume       = {6},
      issn         = {2168-6734},
      address      = {[New York, NY]},
      publisher    = {IEEE},
      reportid     = {FZJ-2018-02292},
      pages        = {1033 - 1040},
      year         = {2018},
      abstract     = {A half SRAM cell with strained Si nanowire complementary
                      Tunnel-FETs (CTFET) was fabricated and characterized to
                      explore the feasibility and functionality of 6T-SRAM based
                      on TFETs. Outward-faced n-TFETs are used as
                      access-transistors. Static measurements were performed to
                      determine the SRAM butterfly curves, allowing the assessment
                      of cell functionality and stability. The forward p-i-n
                      leakage of the access-transistor at certain bias
                      configurations leads to malfunctioning storage operation,
                      even without the contribution of the ambipolar behavior. At
                      large VDD, lowering of the bit-line bias is needed to
                      mitigate such effect, demonstrating functional hold, read
                      and write operations. Circuit simulations were carried out
                      using a Verilog-A compact model calibrated on the
                      experimental TFETs, providing a better understanding of the
                      TFET SRAM operation at different supply voltages and for
                      different cell sizing and giving an estimate of the dynamic
                      performance of the cell.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141) / 521 - Controlling Electron Charge-Based
                      Phenomena (POF3-521) / E2SWITCH - Energy Efficient Tunnel
                      FET Switches and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-141 / G:(DE-HGF)POF3-521 /
                      G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000443963500012},
      doi          = {10.1109/JEDS.2018.2825639},
      url          = {https://juser.fz-juelich.de/record/844953},
}