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@ARTICLE{Kellner:844990,
      author       = {Kellner, J. and Bihlmayer, G. and Liebmann, M. and Otto, S.
                      and Pauly, C. and Boschker, J. E. and Bragaglia, V. and
                      Cecchi, S. and Wang, R. N. and Deringer, V. L. and Küppers,
                      P. and Bhaskar, P. and Golias, E. and Sánchez-Barriga, J.
                      and Dronskowski, R. and Fauster, T. and Rader, O. and
                      Calarco, R. and Morgenstern, M.},
      title        = {{M}apping the band structure of {G}e{S}b{T}e phase change
                      alloys around the {F}ermi level},
      journal      = {Communications Physics},
      volume       = {1},
      number       = {1},
      issn         = {2399-3650},
      address      = {London},
      publisher    = {Springer Nature},
      reportid     = {FZJ-2018-02325},
      pages        = {5},
      year         = {2018},
      abstract     = {Phase change alloys are used for non-volatile random-access
                      memories exploiting the conductivity contrast between
                      amorphous and metastable, crystalline phase. However, this
                      contrast has never been directly related to the electronic
                      band structure. Here we employ photoelectron spectroscopy to
                      map the relevant bands for metastable, epitaxial GeSbTe
                      films. The constant energy surfaces of the valence band
                      close to the Fermi level are hexagonal tubes with little
                      dispersion perpendicular to the (111) surface. The electron
                      density responsible for transport belongs to the tails of
                      this bulk valence band, which is broadened by disorder,
                      i.e., the Fermi level is 100 meV above the valence band
                      maximum. This result is consistent with transport data of
                      such films in terms of charge carrier density and scattering
                      time. In addition, we find a state in the bulk band gap with
                      linear dispersion, which might be of topological origin.},
      cin          = {PGI-1 / IAS-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)IAS-1-20090406 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / Magnetic Anisotropy of Metallic Layered Systems and
                      Nanostructures $(jiff13_20131101)$},
      pid          = {G:(DE-HGF)POF3-143 / $G:(DE-Juel1)jiff13_20131101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000433471800005},
      doi          = {10.1038/s42005-018-0005-8},
      url          = {https://juser.fz-juelich.de/record/844990},
}