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@INPROCEEDINGS{Aussen:845016,
      author       = {Aussen, Stephan and Hardtdegen, Alexander and Heisig,
                      Thomas and Bäumer, Christoph and Dittmann, Regina and
                      Hoffmann-Eifert, Susanne},
      title        = {{H}afnium oxide interface formation during {ALD} oxide
                      growth on pure {H}f films for resistive switches},
      reportid     = {FZJ-2018-02345},
      year         = {2018},
      month         = {Mar},
      date          = {2018-03-11},
      organization  = {DPG Frühjahrstagung, Berlin
                       (Germany), 11 Mar 2018 - 16 Mar 2018},
      subtyp        = {Other},
      cin          = {PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/845016},
}