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@ARTICLE{Lbben:845039,
      author       = {Lübben, Michael and Wiefels, Stefan and Waser, R. and
                      Valov, Ilia},
      title        = {{P}rocesses and {E}ffects of {O}xygen and {M}oisture in
                      {R}esistively {S}witching {T}a{O} x and {H}f{O} x},
      journal      = {Advanced electronic materials},
      volume       = {4},
      number       = {1},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2018-02368},
      pages        = {1700458 -},
      year         = {2018},
      abstract     = {Foreign components such as dopants and impurities in
                      molecular or ionic form may significantly influence
                      forming/switching processes in redox‐based memories. This
                      work presents a systematic study and discussion on effects
                      of oxygen and moisture in Ta2O5 and HfO2 thin films, being
                      two of the most used materials for redox‐based resistively
                      switching random access memories. Whereas oxygen is found to
                      not affect the device behavior, the presence of moisture
                      profoundly influences it. It plays a crucial role for the
                      counter electrode reaction, providing additional charged
                      species and enabling the formation of oxygen vacancies, thus
                      determining the forming voltage and the kinetics of this
                      process. Here, methods for incorporation of moisture within
                      the oxide films and its defect chemistry are discussed.
                      Based on the standard electrode potentials and analysis of
                      the electrochemical processes at both electrodes, it is
                      possible to predict their sequence during switching. The
                      difference using symmetric cells with inert electrodes
                      Pt/MeOx/Pt and asymmetric devices with ohmic electrodes
                      Me/MeOx/Pt is explained by the electrochemical reaction
                      sequence and ability of the ohmic electrode to undergo redox
                      reactions. Upon oxidation the Me electrode can either
                      exchange O2− with the oxide or can be a source for cations
                      within the MeOx, keeping the balance between oxygen
                      rich/deficient matrix.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000419670400024},
      doi          = {10.1002/aelm.201700458},
      url          = {https://juser.fz-juelich.de/record/845039},
}