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@ARTICLE{Rupp:845041,
      author       = {Rupp, Jonathan A. J. and Querré, Madec and Kindsmüller,
                      Andreas and Besland, Marie-Paule and Janod, Etienne and
                      Dittmann, Regina and Waser, R. and Wouters, Dirk J.},
      title        = {{D}ifferent threshold and bipolar resistive switching
                      mechanisms in reactively sputtered amorphous undoped and
                      {C}r-doped vanadium oxide thin films},
      journal      = {Journal of applied physics},
      volume       = {123},
      number       = {4},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2018-02370},
      pages        = {044502 -},
      year         = {2018},
      abstract     = {This study investigates resistive switching in amorphous
                      undoped and Cr-doped vanadium oxide thin films synthesized
                      by sputtering deposition at low oxygen partial pressure. Two
                      different volatile threshold switching characteristics can
                      occur as well as a non-volatile bipolar switching mechanism,
                      depending on device stack symmetry and Cr-doping. The two
                      threshold switching types are associated with different
                      crystalline phases in the conduction filament created during
                      an initial forming step. The first kind of threshold
                      switching, observed for undoped vanadium oxide films, was,
                      by its temperature dependence, proven to be associated with
                      a thermally triggered insulator-to-metal transition in a
                      crystalline VO2 phase, whereas the threshold switch observed
                      in chromium doped films is stable up to 90 °C and shows
                      characteristics of an electronically induced Mott
                      transition. This different behaviour for undoped versus
                      doped films has been attributed to an increased stability of
                      V3+ due to the Cr3+ doping (as evidenced by X-ray
                      photoelectron spectroscopy analysis), probably favouring the
                      creation of a crystalline Cr-doped V2O3 phase (rather than a
                      Cr-doped VO2 phase) during the energetic forming step. The
                      symmetric Pt/a-(VCr)Ox/Pt device showing high temperature
                      stable threshold switching may find interesting applications
                      as a possible new selector device for resistive switching
                      memory (ReRAM) crossbar arrays.I. INTRODUCTION},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000423875800035},
      doi          = {10.1063/1.5006145},
      url          = {https://juser.fz-juelich.de/record/845041},
}