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@ARTICLE{Nayak:845045,
      author       = {Nayak, Alpana and Unayama, Satomi and Tai, Seishiro and
                      Tsuruoka, Tohru and Aono, Masakazu and Waser, R. and Valov,
                      Ilia and Hasegawa, Tsuyoshi},
      title        = {{N}anoarchitectonics for {C}ontrolling the {N}umber of
                      {D}opant {A}toms in {S}olid {E}lectrolyte {N}anodots},
      journal      = {Advanced materials},
      volume       = {30},
      number       = {6},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2018-02374},
      pages        = {1703261 -},
      year         = {2018},
      abstract     = {Controlling movements of electrons and holes is the key
                      task in developing today's highly sophisticated information
                      society. As transistors reach their physical limits, the
                      semiconductor industry is seeking the next alternative to
                      sustain its economy and to unfold a new era of human
                      civilization. In this context, a completely new information
                      token, i.e., ions instead of electrons, is promising. The
                      current trend in solid‐state nanoionics for applications
                      in energy storage, sensing, and brain‐type information
                      processing, requires the ability to control the properties
                      of matter at the ultimate atomic scale. Here, a conceptually
                      novel nanoarchitectonic strategy is proposed for controlling
                      the number of dopant atoms in a solid electrolyte to obtain
                      discrete electrical properties. Using α‐Ag2+δS nanodots
                      with a finite number of nonstoichiometry excess dopants as a
                      model system, a theory matched with experiments is presented
                      that reveals the role of physical parameters, namely, the
                      separation between electrochemical energy levels and the
                      cohesive energy, underlying atomic‐scale manipulation of
                      dopants in nanodots. This strategy can be applied to
                      different nanoscale materials as their properties strongly
                      depend on the number of doping atoms/ions, and has the
                      potential to create a new paradigm based on controlled
                      single atom/ion transfer},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000424485100003},
      pubmed       = {pmid:29314325},
      doi          = {10.1002/adma.201703261},
      url          = {https://juser.fz-juelich.de/record/845045},
}