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@PHDTHESIS{Richter:845075,
author = {Richter, Alexei},
title = {{N}anocrystalline {S}ilicon {O}xide in {S}ilicon
{H}eterojunction {S}olar {C}ells},
volume = {416},
school = {RWTH Aachen},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2018-02400},
isbn = {978-3-95806-310-5},
series = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
Umwelt / Energy $\&$ Environment},
pages = {166 S.},
year = {2018},
note = {RWTH Aachen, Diss., 2018},
abstract = {To advance the contribution of photovoltaic (PV) systems in
a transition towards fully sustainable energy generation,
the costs of the associated systems need to decrease. In
particular, a constant evolution of their solar energy
conversion efficiency ($\eta$) is an effective way to reduce
the overall costs of the energy production of a solar cell.
In the recent decade high $\eta$ have been achieved by the
silicon heterojunction (SHJ) solar cell technology, which
allows for a very high open circuit voltage (Voc). However,
the parasitic absorptance (A$_{paras}$) within the doped
hydrogenated amorphous silicon (a-Si:H) layers still causes
a significant reduction in the short circuit current density
(J$_{sc}$) of a SHJ solar cell. In contrast, thin films of
hydrogenated nanocrystalline silicon oxide (nc-SiO$_{x}$:H)
are significantly more transparent. This is related to their
advantageous microstructure, in which a conductive network
of crystalline silicon (c-Si) is combined with a silicon
dioxide (SiO$_{2}$)-like matrix at the nanoscale.
Nevertheless, a trade-off between a high conductivity and a
high transparency has to be considered due to the
conflicting properties of the two phases. Accordingly, the
aim of this thesis was to develop doped nc-SiO$_{x}$:H films
at an increased deposition frequency (very high frequency
(VHF)) to improve the optoelectronic trade-off of the films.
Furthermore, these layers were applied in SHJ solar cells to
achieve a low Aparas and, thereby, an enhanced J$_{sc}$.
Additionally, a continuous enhancement of $\eta$ was
accomplished by changes in the design of the solar cells. In
detail, films of nc-SiO$_{x}$:H were optimized at VHF using
plasma enhanced chemical vapor deposition (PECVD). By
exploiting the increased atomic H density at VHF, an
improved phase separation was achieved in comparison to
films deposited at radio frequency (RF) within the same
deposition system and the [...]},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
url = {https://juser.fz-juelich.de/record/845075},
}