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@PHDTHESIS{Richter:845075,
      author       = {Richter, Alexei},
      title        = {{N}anocrystalline {S}ilicon {O}xide in {S}ilicon
                      {H}eterojunction {S}olar {C}ells},
      volume       = {416},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2018-02400},
      isbn         = {978-3-95806-310-5},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {166 S.},
      year         = {2018},
      note         = {RWTH Aachen, Diss., 2018},
      abstract     = {To advance the contribution of photovoltaic (PV) systems in
                      a transition towards fully sustainable energy generation,
                      the costs of the associated systems need to decrease. In
                      particular, a constant evolution of their solar energy
                      conversion efficiency ($\eta$) is an effective way to reduce
                      the overall costs of the energy production of a solar cell.
                      In the recent decade high $\eta$ have been achieved by the
                      silicon heterojunction (SHJ) solar cell technology, which
                      allows for a very high open circuit voltage (Voc). However,
                      the parasitic absorptance (A$_{paras}$) within the doped
                      hydrogenated amorphous silicon (a-Si:H) layers still causes
                      a significant reduction in the short circuit current density
                      (J$_{sc}$) of a SHJ solar cell. In contrast, thin films of
                      hydrogenated nanocrystalline silicon oxide (nc-SiO$_{x}$:H)
                      are significantly more transparent. This is related to their
                      advantageous microstructure, in which a conductive network
                      of crystalline silicon (c-Si) is combined with a silicon
                      dioxide (SiO$_{2}$)-like matrix at the nanoscale.
                      Nevertheless, a trade-off between a high conductivity and a
                      high transparency has to be considered due to the
                      conflicting properties of the two phases. Accordingly, the
                      aim of this thesis was to develop doped nc-SiO$_{x}$:H films
                      at an increased deposition frequency (very high frequency
                      (VHF)) to improve the optoelectronic trade-off of the films.
                      Furthermore, these layers were applied in SHJ solar cells to
                      achieve a low Aparas and, thereby, an enhanced J$_{sc}$.
                      Additionally, a continuous enhancement of $\eta$ was
                      accomplished by changes in the design of the solar cells. In
                      detail, films of nc-SiO$_{x}$:H were optimized at VHF using
                      plasma enhanced chemical vapor deposition (PECVD). By
                      exploiting the increased atomic H density at VHF, an
                      improved phase separation was achieved in comparison to
                      films deposited at radio frequency (RF) within the same
                      deposition system and the [...]},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/845075},
}