Hauptseite > Publikationsdatenbank > Nanocrystalline Silicon Oxide in Silicon Heterojunction Solar Cells > print |
001 | 845075 | ||
005 | 20240712084520.0 | ||
020 | _ | _ | |a 978-3-95806-310-5 |
024 | 7 | _ | |2 Handle |a 2128/18058 |
037 | _ | _ | |a FZJ-2018-02400 |
041 | _ | _ | |a English |
100 | 1 | _ | |0 P:(DE-Juel1)162140 |a Richter, Alexei |b 0 |e Corresponding author |g male |u fzj |
245 | _ | _ | |a Nanocrystalline Silicon Oxide in Silicon Heterojunction Solar Cells |f - 2018-02-01 |
260 | _ | _ | |a Jülich |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |c 2018 |
300 | _ | _ | |a 166 S. |
336 | 7 | _ | |2 DataCite |a Output Types/Dissertation |
336 | 7 | _ | |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |a Book |m book |
336 | 7 | _ | |2 ORCID |a DISSERTATION |
336 | 7 | _ | |2 BibTeX |a PHDTHESIS |
336 | 7 | _ | |0 2 |2 EndNote |a Thesis |
336 | 7 | _ | |0 PUB:(DE-HGF)11 |2 PUB:(DE-HGF) |a Dissertation / PhD Thesis |b phd |m phd |s 1523867527_18984 |
336 | 7 | _ | |2 DRIVER |a doctoralThesis |
490 | 0 | _ | |a Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment |v 416 |
502 | _ | _ | |a RWTH Aachen, Diss., 2018 |b Dissertation |c RWTH Aachen |d 2018 |
520 | _ | _ | |a To advance the contribution of photovoltaic (PV) systems in a transition towards fully sustainable energy generation, the costs of the associated systems need to decrease. In particular, a constant evolution of their solar energy conversion efficiency ($\eta$) is an effective way to reduce the overall costs of the energy production of a solar cell. In the recent decade high $\eta$ have been achieved by the silicon heterojunction (SHJ) solar cell technology, which allows for a very high open circuit voltage (Voc). However, the parasitic absorptance (A$_{paras}$) within the doped hydrogenated amorphous silicon (a-Si:H) layers still causes a significant reduction in the short circuit current density (J$_{sc}$) of a SHJ solar cell. In contrast, thin films of hydrogenated nanocrystalline silicon oxide (nc-SiO$_{x}$:H) are significantly more transparent. This is related to their advantageous microstructure, in which a conductive network of crystalline silicon (c-Si) is combined with a silicon dioxide (SiO$_{2}$)-like matrix at the nanoscale. Nevertheless, a trade-off between a high conductivity and a high transparency has to be considered due to the conflicting properties of the two phases. Accordingly, the aim of this thesis was to develop doped nc-SiO$_{x}$:H films at an increased deposition frequency (very high frequency (VHF)) to improve the optoelectronic trade-off of the films. Furthermore, these layers were applied in SHJ solar cells to achieve a low Aparas and, thereby, an enhanced J$_{sc}$. Additionally, a continuous enhancement of $\eta$ was accomplished by changes in the design of the solar cells. In detail, films of nc-SiO$_{x}$:H were optimized at VHF using plasma enhanced chemical vapor deposition (PECVD). By exploiting the increased atomic H density at VHF, an improved phase separation was achieved in comparison to films deposited at radio frequency (RF) within the same deposition system and the [...] |
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