%0 Journal Article
%A Köhler, Malte
%A Pomaska, Manuel
%A Lentz, Florian
%A Finger, Friedhelm
%A Rau, Uwe
%A Ding, Kaining
%T Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells
%J ACS applied materials & interfaces
%V 10
%N 17
%@ 1944-8252
%C Washington, DC
%I Soc.
%M FZJ-2018-02598
%P 14259–14263
%D 2018
%X Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO2, in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm2 were achieved using μc-SiC:H(n)/SiO2/c-Si as transparent passivated contacts.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:29664611
%U <Go to ISI:>//WOS:000431723400004
%R 10.1021/acsami.8b02002
%U https://juser.fz-juelich.de/record/845320