TY  - JOUR
AU  - Köhler, Malte
AU  - Pomaska, Manuel
AU  - Lentz, Florian
AU  - Finger, Friedhelm
AU  - Rau, Uwe
AU  - Ding, Kaining
TI  - Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells
JO  - ACS applied materials & interfaces
VL  - 10
IS  - 17
SN  - 1944-8252
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2018-02598
SP  - 14259–14263
PY  - 2018
AB  - Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO2, in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm2 were achieved using μc-SiC:H(n)/SiO2/c-Si as transparent passivated contacts.
LB  - PUB:(DE-HGF)16
C6  - pmid:29664611
UR  - <Go to ISI:>//WOS:000431723400004
DO  - DOI:10.1021/acsami.8b02002
UR  - https://juser.fz-juelich.de/record/845320
ER  -