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@ARTICLE{Khler:845320,
author = {Köhler, Malte and Pomaska, Manuel and Lentz, Florian and
Finger, Friedhelm and Rau, Uwe and Ding, Kaining},
title = {{W}et-{C}hemical {P}reparation of {S}ilicon {T}unnel
{O}xides for {T}ransparent {P}assivated {C}ontacts in
{C}rystalline {S}ilicon {S}olar {C}ells},
journal = {ACS applied materials $\&$ interfaces},
volume = {10},
number = {17},
issn = {1944-8252},
address = {Washington, DC},
publisher = {Soc.},
reportid = {FZJ-2018-02598},
pages = {14259–14263},
year = {2018},
abstract = {Transparent passivated contacts (TPCs) using a wide band
gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon
tunnel oxide (SiO2) stack are an alternative to amorphous
silicon-based contacts for the front side of silicon
heterojunction solar cells. In a systematic study of the
μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected
wet-chemical oxidation methods for the formation of
ultrathin SiO2, in order to passivate the silicon surface
while ensuring a low contact resistivity. By tuning the SiO2
properties, implied open-circuit voltages of 714 mV and
contact resistivities of 32 mΩ cm2 were achieved using
μc-SiC:H(n)/SiO2/c-Si as transparent passivated contacts.},
cin = {IEK-5},
ddc = {540},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:29664611},
UT = {WOS:000431723400004},
doi = {10.1021/acsami.8b02002},
url = {https://juser.fz-juelich.de/record/845320},
}