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@ARTICLE{Rhr:845557,
      author       = {Röhr, Jason A. and Shi, Xingyuan and Haque, Saif A. and
                      Kirchartz, Thomas and Nelson, Jenny},
      title        = {{C}harge {T}ransport in {S}piro-{OM}e{TAD} {I}nvestigated
                      through {S}pace-{C}harge-{L}imited {C}urrent {M}easurements},
      journal      = {Physical review applied},
      volume       = {9},
      number       = {4},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2018-02782},
      pages        = {044017},
      year         = {2018},
      abstract     = {Extracting charge-carrier mobilities for organic
                      semiconductors from space-charge-limited conduction
                      measurements is complicated in practice by nonideal factors
                      such as trapping in defects and injection barriers. Here, we
                      show that by allowing the bandlike charge-carrier mobility,
                      trap characteristics, injection barrier heights, and the
                      shunt resistance to vary in a multiple-trapping
                      drift-diffusion model, a numerical fit can be obtained to
                      the entire current density–voltage curve from experimental
                      space-charge-limited current measurements on both symmetric
                      and asymmetric
                      2,2′,7,7′-tetrakis(N,N-di-4-methoxyphenylamine)-9,9′-spirobifluorene
                      (spiro-OMeTAD) single-carrier devices. This approach yields
                      a bandlike mobility that is more than an order of magnitude
                      higher than the effective mobility obtained using analytical
                      approximations, such as the Mott-Gurney law and the
                      moving-electrode equation. It is also shown that where these
                      analytical approximations require a temperature-dependent
                      effective mobility to achieve fits, the numerical model can
                      yield a temperature-, electric-field-, and
                      charge-carrier-density-independent mobility. Finally, we
                      present an analytical model describing trap-limited current
                      flow through a semiconductor in a symmetric single-carrier
                      device. We compare the obtained charge-carrier mobility and
                      trap characteristics from this analytical model to the
                      results from the numerical model, showing excellent
                      agreement. This work shows the importance of accounting for
                      traps and injection barriers explicitly when analyzing
                      current density–voltage curves from space-charge-limited
                      current measurements.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000429779300001},
      doi          = {10.1103/PhysRevApplied.9.044017},
      url          = {https://juser.fz-juelich.de/record/845557},
}