%0 Journal Article
%A Aeberhard, U.
%A Gonzalo, A.
%A Ulloa, J. M.
%T Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
%J Applied physics letters
%V 112
%N 21
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2018-03170
%P 213904
%D 2018
%X Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on the period thickness.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000433140900045
%R 10.1063/1.5030625
%U https://juser.fz-juelich.de/record/845998