TY  - JOUR
AU  - Aeberhard, U.
AU  - Gonzalo, A.
AU  - Ulloa, J. M.
TI  - Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
JO  - Applied physics letters
VL  - 112
IS  - 21
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2018-03170
SP  - 213904
PY  - 2018
AB  - Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on the period thickness.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000433140900045
DO  - DOI:10.1063/1.5030625
UR  - https://juser.fz-juelich.de/record/845998
ER  -