% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Aeberhard:845998,
author = {Aeberhard, U. and Gonzalo, A. and Ulloa, J. M.},
title = {{P}hotocarrier extraction in {G}a{A}s{S}b/{G}a{A}s{N}
type-{II} {QW} superlattice solar cells},
journal = {Applied physics letters},
volume = {112},
number = {21},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2018-03170},
pages = {213904},
year = {2018},
abstract = {Photocarrier transport and extraction in GaAsSb/GaAsN
type-II quantum well superlattices are investigated by means
of inelastic quantum transport calculations based on the
non-equilibrium Green's function formalism. Evaluation of
the local density of states and the spectral current flow
enables the identification of different regimes for carrier
localization, transport, and extraction as a function of
configurational parameters. These include the number of
periods, the thicknesses of the individual layers in one
period, the built-in electric field, and the temperature of
operation. The results for the carrier extraction efficiency
are related to experimental data for different symmetric
GaAsSb/GaAsN type-II quantum well superlattice solar cell
devices and provide a qualitative explanation for the
experimentally observed dependence of photovoltaic device
performance on the period thickness.},
cin = {IEK-5 / JARA-HPC},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
pnm = {121 - Solar cells of the next generation (POF3-121) /
Ab-initio description of charge carrier dynamics at
defective interfaces in solar cells $(jiek50_20171101)$},
pid = {G:(DE-HGF)POF3-121 / $G:(DE-Juel1)jiek50_20171101$},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000433140900045},
doi = {10.1063/1.5030625},
url = {https://juser.fz-juelich.de/record/845998},
}