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@ARTICLE{Aeberhard:845998,
      author       = {Aeberhard, U. and Gonzalo, A. and Ulloa, J. M.},
      title        = {{P}hotocarrier extraction in {G}a{A}s{S}b/{G}a{A}s{N}
                      type-{II} {QW} superlattice solar cells},
      journal      = {Applied physics letters},
      volume       = {112},
      number       = {21},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2018-03170},
      pages        = {213904},
      year         = {2018},
      abstract     = {Photocarrier transport and extraction in GaAsSb/GaAsN
                      type-II quantum well superlattices are investigated by means
                      of inelastic quantum transport calculations based on the
                      non-equilibrium Green's function formalism. Evaluation of
                      the local density of states and the spectral current flow
                      enables the identification of different regimes for carrier
                      localization, transport, and extraction as a function of
                      configurational parameters. These include the number of
                      periods, the thicknesses of the individual layers in one
                      period, the built-in electric field, and the temperature of
                      operation. The results for the carrier extraction efficiency
                      are related to experimental data for different symmetric
                      GaAsSb/GaAsN type-II quantum well superlattice solar cell
                      devices and provide a qualitative explanation for the
                      experimentally observed dependence of photovoltaic device
                      performance on the period thickness.},
      cin          = {IEK-5 / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
      pnm          = {121 - Solar cells of the next generation (POF3-121) /
                      Ab-initio description of charge carrier dynamics at
                      defective interfaces in solar cells $(jiek50_20171101)$},
      pid          = {G:(DE-HGF)POF3-121 / $G:(DE-Juel1)jiek50_20171101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000433140900045},
      doi          = {10.1063/1.5030625},
      url          = {https://juser.fz-juelich.de/record/845998},
}