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024 7 _ |a 1077-3118
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100 1 _ |a Aeberhard, U.
|0 P:(DE-Juel1)130210
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245 _ _ |a Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
260 _ _ |a Melville, NY
|c 2018
|b American Inst. of Physics
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520 _ _ |a Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on the period thickness.
536 _ _ |a 121 - Solar cells of the next generation (POF3-121)
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536 _ _ |a Ab-initio description of charge carrier dynamics at defective interfaces in solar cells (jiek50_20171101)
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700 1 _ |a Gonzalo, A.
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700 1 _ |a Ulloa, J. M.
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773 _ _ |a 10.1063/1.5030625
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