TY  - JOUR
AU  - von den Driesch, Nils
AU  - Stange, Daniela
AU  - Rainko, Denis
AU  - Povstugar, Ivan
AU  - Zaumseil, Peter
AU  - Capellini, Giovanni
AU  - Schröder, Thomas
AU  - Denneulin, Thibaud
AU  - Ikonic, Zoran
AU  - Hartmann, Jean-Michel
AU  - Sigg, Hans
AU  - Mantl, Siegfried
AU  - Grützmacher, Detlev
AU  - Buca, Dan Mihai
TI  - Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
JO  - Advanced science
VL  - 5
IS  - 6
SN  - 2198-3844
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2018-03171
SP  - 1700955
PY  - 2018
AB  - Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi‐quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark‐field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal‐oxide‐semiconductor (CMOS)‐compatible group IV lasers.
LB  - PUB:(DE-HGF)16
C6  - pmid:29938172
UR  - <Go to ISI:>//WOS:000435765900022
DO  - DOI:10.1002/advs.201700955
UR  - https://juser.fz-juelich.de/record/845999
ER  -