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@ARTICLE{vondenDriesch:845999,
      author       = {von den Driesch, Nils and Stange, Daniela and Rainko, Denis
                      and Povstugar, Ivan and Zaumseil, Peter and Capellini,
                      Giovanni and Schröder, Thomas and Denneulin, Thibaud and
                      Ikonic, Zoran and Hartmann, Jean-Michel and Sigg, Hans and
                      Mantl, Siegfried and Grützmacher, Detlev and Buca, Dan
                      Mihai},
      title        = {{A}dvanced {G}e{S}n/{S}i{G}e{S}n {G}roup {IV}
                      {H}eterostructure {L}asers},
      journal      = {Advanced science},
      volume       = {5},
      number       = {6},
      issn         = {2198-3844},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2018-03171},
      pages        = {1700955},
      year         = {2018},
      abstract     = {Growth and characterization of advanced group IV
                      semiconductor materials with CMOS‐compatible applications
                      are demonstrated, both in photonics. The investigated
                      GeSn/SiGeSn heterostructures combine direct bandgap GeSn
                      active layers with indirect gap ternary SiGeSn claddings, a
                      design proven its worth already decades ago in the III–V
                      material system. Different types of double heterostructures
                      and multi‐quantum wells (MQWs) are epitaxially grown with
                      varying well thicknesses and barriers. The retaining high
                      material quality of those complex structures is probed by
                      advanced characterization methods, such as atom probe
                      tomography and dark‐field electron holography to extract
                      composition parameters and strain, used further for band
                      structure calculations. Special emphasis is put on the
                      impact of carrier confinement and quantization effects,
                      evaluated by photoluminescence and validated by theoretical
                      calculations. As shown, particularly MQW heterostructures
                      promise the highest potential for efficient next generation
                      complementary metal‐oxide‐semiconductor
                      (CMOS)‐compatible group IV lasers.},
      cin          = {PGI-9 / ZEA-3 / PGI-5 / JARA-FIT},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406 /
                      I:(DE-Juel1)PGI-5-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29938172},
      UT           = {WOS:000435765900022},
      doi          = {10.1002/advs.201700955},
      url          = {https://juser.fz-juelich.de/record/845999},
}