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@ARTICLE{Gasparyan:847918,
      author       = {Gasparyan, Ferdinand and Zadorozhnyi, Ihor and Khondkaryan,
                      Hrant and Arakelyan, Armen and Vitusevich, Svetlana},
      title        = {{P}hotoconductivity, p{H} {S}ensitivity, {N}oise, and
                      {C}hannel {L}ength {E}ffects in {S}i {N}anowire {FET}
                      {S}ensors},
      journal      = {Nanoscale research letters},
      volume       = {13},
      number       = {1},
      issn         = {1556-276X},
      address      = {New York, NY [u.a.]},
      publisher    = {Springer},
      reportid     = {FZJ-2018-03239},
      pages        = {87-1-9},
      year         = {2018},
      abstract     = {Silicon nanowire (NW) field-effect transistor (FET) sensors
                      of various lengths were fabricated. Transport properties of
                      Si NW FET sensors were investigated involving noise
                      spectroscopy and current–voltage (I–V) characterization.
                      The static I–V dependencies demonstrate the high quality
                      of fabricated silicon FETs without leakage current.
                      Transport and noise properties of NW FET structures were
                      investigated under different light illumination conditions,
                      as well as in sensor configuration in an aqueous solution
                      with different pH values. Furthermore, we studied channel
                      length effects on the photoconductivity, noise, and pH
                      sensitivity. The magnitude of the channel current is
                      approximately inversely proportional to the length of the
                      current channel, and the pH sensitivity increases with the
                      increase of channel length approaching the Nernst limit
                      value of 59.5 mV/pH. We demonstrate that dominant 1/f-noise
                      can be screened by the generation-recombination plateau at
                      certain pH of the solution or external optical excitation.
                      The characteristic frequency of the generation-recombination
                      noise component decreases with increasing of illumination
                      power. Moreover, it is shown that the measured value of the
                      slope of 1/f-noise spectral density dependence on the
                      current channel length is 2.7 which is close to the
                      theoretically predicted value of 3.},
      cin          = {ICS-8},
      ddc          = {600},
      cid          = {I:(DE-Juel1)ICS-8-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29589128},
      UT           = {WOS:000428786200003},
      doi          = {10.1186/s11671-018-2494-5},
      url          = {https://juser.fz-juelich.de/record/847918},
}