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@ARTICLE{Hensling:848173,
      author       = {Hensling, Felix and Keeble, D. J. and Zhu, J. and Brose, S.
                      and Xu, C. and Gunkel, F. and Danylyuk, S. and Nonnenmann,
                      S. S. and Egger, W. and Dittmann, R.},
      title        = {{UV} radiation enhanced oxygen vacancy formation caused by
                      the {PLD} plasma plume},
      journal      = {Scientific reports},
      volume       = {8},
      number       = {1},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2018-03439},
      pages        = {8846},
      year         = {2018},
      abstract     = {Pulsed Laser Deposition is a commonly used non-equilibrium
                      physical deposition technique for the growth of complex
                      oxide thin films. A wide range of parameters is known to
                      influence the properties of the used samples and thin films,
                      especially the oxygen-vacancy concentration. One parameter
                      has up to this point been neglected due to the challenges of
                      separating its influence from the influence of the impinging
                      species during growth: the UV-radiation of the plasma plume.
                      We here present experiments enabled by a specially designed
                      holder to allow a separation of these two influences. The
                      influence of the UV-irradiation during pulsed laser
                      deposition on the formation of oxygen-vacancies is
                      investigated for the perovskite model material SrTiO3. The
                      carrier concentration of UV-irradiated samples is nearly
                      constant with depth and time. By contrast samples not
                      exposed to the radiation of the plume show a depth
                      dependence and a decrease in concentration over time. We
                      reveal an increase in Ti-vacancy–oxygen-vacancy-complexes
                      for UV irradiated samples, consistent with the different
                      carrier concentrations. We find a UV enhanced oxygen-vacancy
                      incorporation rate as responsible mechanism. We provide a
                      complete picture of another influence parameter to be
                      considered during pulsed laser depositions and unravel the
                      mechanism behind persistent-photo-conductivity in SrTiO3.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29892095},
      UT           = {WOS:000434776600052},
      doi          = {10.1038/s41598-018-27207-5},
      url          = {https://juser.fz-juelich.de/record/848173},
}