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100 1 _ |a Hensling, Felix
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245 _ _ |a UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume
260 _ _ |a London
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520 _ _ |a Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the growth of complex oxide thin films. A wide range of parameters is known to influence the properties of the used samples and thin films, especially the oxygen-vacancy concentration. One parameter has up to this point been neglected due to the challenges of separating its influence from the influence of the impinging species during growth: the UV-radiation of the plasma plume. We here present experiments enabled by a specially designed holder to allow a separation of these two influences. The influence of the UV-irradiation during pulsed laser deposition on the formation of oxygen-vacancies is investigated for the perovskite model material SrTiO3. The carrier concentration of UV-irradiated samples is nearly constant with depth and time. By contrast samples not exposed to the radiation of the plume show a depth dependence and a decrease in concentration over time. We reveal an increase in Ti-vacancy–oxygen-vacancy-complexes for UV irradiated samples, consistent with the different carrier concentrations. We find a UV enhanced oxygen-vacancy incorporation rate as responsible mechanism. We provide a complete picture of another influence parameter to be considered during pulsed laser depositions and unravel the mechanism behind persistent-photo-conductivity in SrTiO3.
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700 1 _ |a Keeble, D. J.
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700 1 _ |a Zhu, J.
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700 1 _ |a Brose, S.
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700 1 _ |a Xu, C.
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700 1 _ |a Gunkel, F.
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700 1 _ |a Danylyuk, S.
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700 1 _ |a Nonnenmann, S. S.
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700 1 _ |a Egger, W.
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773 _ _ |a 10.1038/s41598-018-27207-5
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