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@ARTICLE{Hufnagel:848218,
      author       = {Hufnagel, Alexander and Ann‐Kathrin Henß and Hoffmann,
                      Ramona and Zeman, Otto and Häringer, Sebastian and
                      Fattakhova-Rohlfing, Dina and Bein, Thomas},
      title        = {{E}lectron‐{B}locking and {O}xygen {E}volution {C}atalyst
                      {L}ayers by {P}lasma‐{E}nhanced {A}tomic {L}ayer
                      {D}eposition of {N}ickel {O}xide},
      journal      = {Advanced materials interfaces},
      volume       = {5},
      number       = {16},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2018-03480},
      pages        = {1701531},
      year         = {2018},
      abstract     = {A plasma‐enhanced atomic layer deposition (ALD) process
                      is presented, capable of producing thin conformal films of
                      nickel(II) oxide (NiO) on various substrates. Nickelocene
                      (NiCp2) is used as an inexpensive metal precursor with
                      oxygen plasma as the oxidant. The film growth rate saturates
                      with both nickel precursor and plasma exposure. An ALD
                      window is observed between 225 and 275 °C. Linear growth is
                      achieved at 250 °C with a growth rate of 0.042 nm per
                      cycle. The thickness is highly uniform and the surface
                      roughness is below 1 nm rms for 52 nm thick films on
                      Si(100). Substrates with aspect ratios up to 1:10 can be
                      processed. As‐deposited, the films consist of
                      polycrystalline, cubic NiO, and are transparent over the
                      entire visible range with an optical bandgap of 3.7 eV. The
                      films consist of stoichiometric NiO and contain $≈1\%$ of
                      carbon impurities. Two promising applications of these films
                      are showcased in renewable energy conversion and storage
                      devices: The films are pinhole‐free and exhibit excellent
                      electron blocking capabilities, making them potential
                      hole‐selective contact layers in solar cells. Also, high
                      electrocatalytic activity of ultrathin NiO films is
                      demonstrated for the alkaline oxygen evolution reaction,
                      especially in electrolytes containing Fe3+.},
      cin          = {IEK-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-1-20101013},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000442489600001},
      doi          = {10.1002/admi.201701531},
      url          = {https://juser.fz-juelich.de/record/848218},
}