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@ARTICLE{Valov:848348,
      author       = {Valov, Ilia and Tsuruoka, Tohru},
      title        = {{E}ffects of moisture and redox reactions in {VCM} and
                      {ECM} resistive switching memories},
      journal      = {Journal of physics / D},
      volume       = {51},
      number       = {41},
      issn         = {0022-3727},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2018-03591},
      pages        = {413001 -},
      year         = {2018},
      abstract     = {Redox-based memristive devices (ReRAM) have been
                      intensively studied in recent years with respect to their
                      functions as applications in non-volatile memories, selector
                      devices and building units for beyond von Neumann computing.
                      Despite the fact that many details regarding the switching
                      mechanism have been reported and that significant
                      improvements in the device performance have been achieved,
                      the large variability remains a serious disturbing factor.
                      One of the sources of this variability was shown to be
                      moisture. It can be absorbed from the local environment or
                      during device fabrication. The role of the water molecules
                      is multifold—a source for a counter electrode reaction,
                      they provide additional charges in the oxide matrix, i.e.
                      protons or oxygen, they enhance the ion diffusion and act as
                      a corrosive agent.In this review, we discuss how moisture is
                      incorporated in oxides and its impact on the ReRAM device
                      operation. We show that it affects not only the
                      electrochemical redox characteristics, but that it also
                      increases the conductivity of the material and modulates the
                      switching kinetics. The particular influence of H2O for both
                      electrochemical metallization memories (ECM) and valence
                      change memories (VCM) is exemplarily demonstrated and
                      discussed. The importance of controlled moisture content as
                      a component in the ReRAM devices as a memory and
                      neuromorphic units is highlighted.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000442439100001},
      doi          = {10.1088/1361-6463/aad581},
      url          = {https://juser.fz-juelich.de/record/848348},
}