Hauptseite > Publikationsdatenbank > Effects of moisture and redox reactions in VCM and ECM resistive switching memories > print

001     848348
005     20220930130151.0
024 7 _ |a 10.1088/1361-6463/aad581
|2 doi
024 7 _ |a 0022-3727
|2 ISSN
024 7 _ |a 0262-8171
|2 ISSN
024 7 _ |a 0508-3443
|2 ISSN
024 7 _ |a 1361-6463
|2 ISSN
024 7 _ |a WOS:000442439100001
|2 WOS
024 7 _ |a altmetric:46209116
|2 altmetric
037 _ _ |a FZJ-2018-03591
082 _ _ |a 530
100 1 _ |a Valov, Ilia
|0 P:(DE-Juel1)131014
|b 0
|e Corresponding author
245 _ _ |a Effects of moisture and redox reactions in VCM and ECM resistive switching memories
260 _ _ |a Bristol
|c 2018
|b IOP Publ.
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1536154534_465
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a Redox-based memristive devices (ReRAM) have been intensively studied in recent years with respect to their functions as applications in non-volatile memories, selector devices and building units for beyond von Neumann computing. Despite the fact that many details regarding the switching mechanism have been reported and that significant improvements in the device performance have been achieved, the large variability remains a serious disturbing factor. One of the sources of this variability was shown to be moisture. It can be absorbed from the local environment or during device fabrication. The role of the water molecules is multifold—a source for a counter electrode reaction, they provide additional charges in the oxide matrix, i.e. protons or oxygen, they enhance the ion diffusion and act as a corrosive agent.In this review, we discuss how moisture is incorporated in oxides and its impact on the ReRAM device operation. We show that it affects not only the electrochemical redox characteristics, but that it also increases the conductivity of the material and modulates the switching kinetics. The particular influence of H2O for both electrochemical metallization memories (ECM) and valence change memories (VCM) is exemplarily demonstrated and discussed. The importance of controlled moisture content as a component in the ReRAM devices as a memory and neuromorphic units is highlighted.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Tsuruoka, Tohru
|0 0000-0002-4322-4309
|b 1
773 _ _ |a 10.1088/1361-6463/aad581
|g Vol. 51, no. 41, p. 413001 -
|0 PERI:(DE-600)1472948-9
|n 41
|p 413001 -
|t Journal of physics / D
|v 51
|y 2018
|x 0022-3727
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.2_Small.pdf
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.3_Advanced%20Functional%20Materials.pdf
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Valov_2018_J._Phys._D__Appl._Phys._51_413001.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/for-profit_permission_Valov.pdf
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.2_Small.gif?subformat=icon
|x icon
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.2_Small.jpg?subformat=icon-1440
|x icon-1440
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.2_Small.jpg?subformat=icon-180
|x icon-180
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.2_Small.jpg?subformat=icon-640
|x icon-640
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.3_Advanced%20Functional%20Materials.gif?subformat=icon
|x icon
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.3_Advanced%20Functional%20Materials.jpg?subformat=icon-1440
|x icon-1440
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.3_Advanced%20Functional%20Materials.jpg?subformat=icon-180
|x icon-180
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Licence_Fig.3_Advanced%20Functional%20Materials.jpg?subformat=icon-640
|x icon-640
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Valov_2018_J._Phys._D__Appl._Phys._51_413001.gif?subformat=icon
|x icon
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Valov_2018_J._Phys._D__Appl._Phys._51_413001.jpg?subformat=icon-1440
|x icon-1440
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Valov_2018_J._Phys._D__Appl._Phys._51_413001.jpg?subformat=icon-180
|x icon-180
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Valov_2018_J._Phys._D__Appl._Phys._51_413001.jpg?subformat=icon-640
|x icon-640
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/Valov_2018_J._Phys._D__Appl._Phys._51_413001.pdf?subformat=pdfa
|x pdfa
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/for-profit_permission_Valov.gif?subformat=icon
|x icon
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/for-profit_permission_Valov.jpg?subformat=icon-1440
|x icon-1440
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/for-profit_permission_Valov.jpg?subformat=icon-180
|x icon-180
856 4 _ |u https://juser.fz-juelich.de/record/848348/files/for-profit_permission_Valov.jpg?subformat=icon-640
|x icon-640
909 C O |o oai:juser.fz-juelich.de:848348
|p VDB
|p OpenAPC
|p openCost
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)131014
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2018
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
915 _ _ |a National-Konsortium
|0 StatID:(DE-HGF)0430
|2 StatID
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b J PHYS D APPL PHYS : 2015
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0600
|2 StatID
|b Ebsco Academic Search
915 _ _ |a Peer Review
|0 StatID:(DE-HGF)0030
|2 StatID
|b ASC
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a APC
980 _ _ |a UNRESTRICTED
980 1 _ |a APC

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