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@ARTICLE{Sladek:8485,
      author       = {Sladek, K. and Klinger, V. and Wensorra, J. and Akabori, M.
                      and Hardtdegen, H. and Grützmacher, D.},
      title        = {{MOVPE} of n-doped {G}a{A}s and modulation doped
                      {G}a{A}s/{A}l{G}a{A}s nanowires},
      journal      = {Journal of crystal growth},
      volume       = {312},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-8485},
      pages        = {635 - 640},
      year         = {2010},
      note         = {The authors thank K. Wirtz for his support in MOVPE, and
                      Dr. S. Trellenkamp for electron-beam lithography. One of the
                      authors (M.A.) was financially supported by a JSPS
                      Postdoctoral Fellowship for research abroad.},
      abstract     = {Two different fabrication approaches were compared to
                      obtain conductive GaAs nanowires: on one hand by modulation
                      doping of GaAs/AlGaAs core/shell nanowires, on the other
                      hand by Si-doping of GaAs nanowires. Modulation doped
                      GaAs/AlGaAs core-shell nanowires were grown by selective
                      area metal organic vapor phase epitaxy (MOVPE) on GaAs (1 1
                      1) substrates. The influences of growth parameters and mask
                      design on aspect ratio of the core structures were
                      investigated. The specialty of this study was that the
                      growth mode was switched from vertical GaAs wire growth to
                      the AlGaAs conformal shell overgrowth by intentionally
                      changing the growth chemistry from the use of a more stable
                      group III source - trimethylgallium (TMGa) to more easily
                      decomposed sources - the alternative sources triethylgallium
                      (TEGa) and dimethylethylaminealane (DMEAAI). It was found
                      that the diameter and length of the core structures strongly
                      depend on the arsenic partial pressure and growth
                      temperature as well as mask design. The uniformity of shell
                      growth is also influenced by the mask design. Additionally
                      an alternative approach for the production of conductive
                      GaAs nanowires was under study. To this end, the influence
                      of Si-doping on GaAs core growth was investigated. it was
                      found that doping has a detrimental impact on growth
                      morphology leading to an undesirable enhanced growth rate on
                      the nanowire side facets. (C) 2009 Elsevier B.V. All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Crystallography / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000275137100002},
      doi          = {10.1016/j.jcrysgro.2009.11.026},
      url          = {https://juser.fz-juelich.de/record/8485},
}