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@ARTICLE{Aeberhard:849670,
      author       = {Aeberhard, Urs},
      title        = {{P}hotovoltaics at the mesoscale: insights from
                      quantum-kinetic simulation},
      journal      = {Journal of physics / D},
      volume       = {51},
      issn         = {1361-6463},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2018-03806},
      pages        = {323002},
      year         = {2018},
      abstract     = {This Topical Review discusses insights into the physical
                      mechanisms of nanostructure solar cell operation as provided
                      by numerical device simulation using a state-of-the-art
                      quantum-kinetic framework based on the non-equilibrium
                      Green's function formalism. After a brief introduction to
                      the field of nanostructure photovoltaics and an overview of
                      the existing literature on theoretical description and
                      experimental implementation of such devices, the
                      quantum-kinetic formulation of photovoltaic processes is
                      discussed in detail, together with more conventional
                      modeling approaches, such as global detailed balance theory
                      and the semi-classical drift-diffusion-Poisson–Maxwell
                      picture. Application examples provided subsequently include
                      III–V semiconductor nanostructures ranging from ultra-thin
                      absorbers to quantum well and quantum dot solar cell
                      devices. The focus is on common features encountered in
                      photovoltaic nanostructure architectures, such as the impact
                      of configurational parameters and operating conditions on
                      device characteristics, and the pronounced deviations from
                      the semiclassical bulk picture. Ultra-thin absorbers are
                      investigated with focus on the effect of built-in fields and
                      contact configuration on radiative rates and currents. For
                      the case of single and multi-quantum-well p–i–n devices,
                      generation, recombination and escape of carriers are
                      discussed, and quantum well superlattice solar cells are
                      considered with regard to charge carrier transport regimes
                      ranging from band-like transport in miniband states to
                      sequential tunneling between neighboring periods. Double
                      quantum well structures are further studied in the context
                      of tunnel junctions for multi-junction solar cells. The
                      investigation of quantum dots covers the fluorescence of
                      colloidal nanoparticles for luminescent solar concentrators
                      as well as the impact of configurational parameters on the
                      photovoltaic properties of regimented quantum dot arrays, in
                      both single-junction and intermediate-band configurations.},
      cin          = {IEK-5 / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
      pnm          = {121 - Solar cells of the next generation (POF3-121) /
                      Ab-initio description of charge carrier dynamics at
                      defective interfaces in solar cells $(jiek50_20171101)$},
      pid          = {G:(DE-HGF)POF3-121 / $G:(DE-Juel1)jiek50_20171101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000439238600001},
      doi          = {10.1088/1361-6463/aacf74},
      url          = {https://juser.fz-juelich.de/record/849670},
}