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@ARTICLE{Mukherjee:849687,
      author       = {Mukherjee, Santanu and Kodali, N. and Isheim, D. and
                      Wirths, Stephan and Hartmann, J. M. and Buca, Dan Mihai and
                      Seidman, D. N. and Moutanabbir, O.},
      title        = {{S}hort-range atomic ordering in nonequilibrium
                      silicon-germanium-tin semiconductors},
      journal      = {Physical review / B},
      volume       = {95},
      number       = {16},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2018-03823},
      pages        = {161402},
      year         = {2017},
      abstract     = {The precise knowledge of the atomic order in
                      monocrystalline alloys is fundamental to understand and
                      predict their physical properties. With this perspective, we
                      utilized laser-assisted atom probe tomography to investigate
                      the three-dimensional distribution of atoms in
                      nonequilibrium epitaxial Sn-rich group-IV SiGeSn ternary
                      semiconductors. Different atom probe statistical analysis
                      tools including frequency distribution analysis, partial
                      radial distribution functions, and nearest-neighbor analysis
                      were employed in order to evaluate and compare the behavior
                      of the three elements to their spatial distributions in an
                      ideal solid solution. This atomistic-level analysis provided
                      clear evidence of an unexpected repulsive interaction
                      between Sn and Si leading to the deviation of Si atoms from
                      the theoretical random distribution. This departure from an
                      ideal solid solution is supported by first-principles
                      calculations and attributed to the tendency of the system to
                      reduce its mixing enthalpy throughout the layer-by-layer
                      growth process.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000401765800004},
      doi          = {10.1103/PhysRevB.95.161402},
      url          = {https://juser.fz-juelich.de/record/849687},
}