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@ARTICLE{SchulteBraucks:849688,
      author       = {Schulte-Braucks, Christian and Pandey, Rahul and Sajjad,
                      Redwan Noor and Barth, Mike and Ghosh, Ram Krishna and
                      Grisafe, Ben and Sharma, Pankaj and von den Driesch, Nils
                      and Vohra, Anurag and Rayner, Gilbert Bruce and Loo, Roger
                      and Mantl, Siegfried and Buca, Dan Mihai and Yeh, Chih-Chieh
                      and Wu, Cheng-Hsien and Tsai, Wilman and Antoniadis, Dimitri
                      A. and Datta, Suman},
      title        = {{F}abrication, {C}haracterization, and {A}nalysis of
                      {G}e/{G}e{S}n {H}eterojunction p-{T}ype {T}unnel
                      {T}ransistors},
      journal      = {IEEE transactions on electron devices},
      volume       = {64},
      number       = {10},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2018-03824},
      pages        = {4354 - 4362},
      year         = {2017},
      abstract     = {We present a detailed study on fabrication and
                      characterization of Ge/GeSn heterojunction p-type
                      tunnel-field-effect-transistors (TFETs). Critical process
                      modules as high-k stack and p-i-n diodes are addressed
                      individually. As a result an ultrathin equivalent oxide
                      thickness of 0.84 nm with an accumulation capacitance of 3
                      μF/cm2 was achieved on an extremely scaled tri-layer stack
                      of GeSnOx/Al2O3/HfO2 deposited by atomic-layer deposition
                      monitored in situ by spectroscopic ellipsometry. Combining
                      these process modules, Ge/GeSn heterojunction pTFETs are
                      fabricated and characterized to demonstrate the best
                      in-class pTFET performance in the GeSn material system. The
                      transfer characteristics of the TFETs show signatures of the
                      trap-assisted thermal generation in the subthreshold regime
                      which is explained by a modified Shockley- Read-Hall model.
                      For the ON-state current, we used band-to-band tunneling
                      models calculated using parameters from the density
                      functional theory. We then use the calibrated model to
                      project performance of GeSn pTFETs with increased Sn content
                      (lower bandgap), reduced trap density and ultrathin body
                      geometry. Both experimental and projected results are
                      benchmarked against state-of-the art III-V (e.g.,
                      In0.65Ga0.35/GaAs0.4Sb0.6) pTFETs. We demonstrate the
                      ability of GeSn to achieve superior performance with both
                      high ON-current and sub-60 mV/decade switching benefiting
                      from the small and direct bandgap for higher Sn contents.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000413728700056},
      doi          = {10.1109/TED.2017.2742957},
      url          = {https://juser.fz-juelich.de/record/849688},
}