% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Glass:849692,
      author       = {Glass, Stefan and von den Driesch, Nils and Narimani,
                      Keyvan and Buca, Dan Mihai and Mussler, Gregor and Mantl,
                      Siegfried and Zhao, Qing-Tai},
      title        = {{S}i{G}e based line tunneling field-effect transistors},
      journal      = {Nanoelectronic Devices},
      volume       = {18},
      number       = {1},
      issn         = {2516-3914},
      address      = {London},
      publisher    = {ISTE OpenScience},
      reportid     = {FZJ-2018-03828},
      pages        = {1},
      year         = {2018},
      abstract     = {In this paper we report on our progress with SiGe
                      gate-normal / line tunneling FETs, highlighting recent
                      advancements by the example of three transistor concepts. We
                      demonstrate the unique characteristics shared by these
                      transistors, such as the on-current proportionality to the
                      source-gate-channel overlap area and explain the obstacles
                      imposed by fringing fields leading to parasitic tunneling at
                      the edges of the tunneling area. Our experimental results
                      show that adding counter doping to the channel provides an
                      efficient means to mitigate penalties to the subthreshold
                      swing caused by parasitic tunneling paths and additionally
                      helps to improve the on-current and Ion/Ioff-ratio.
                      Moreover, we point out the dependence of the superlinear
                      onset on the tunneling transmission probability with a focus
                      on the doping profile at the tunneling junction. We consider
                      the role of traps on the subthreshold swing within the scope
                      of temperature dependent electrical measurements.
                      Furthermore, we show that by avoiding ion implantation and
                      hence crystal defects as much as possible, smaller minimum
                      subthreshold swings can be reached. At last, taking the
                      experience acquired on the three transistors concepts into
                      consideration, we propose an advanced TFET concept.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.21494/ISTE.OP.2018.0223},
      url          = {https://juser.fz-juelich.de/record/849692},
}