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@INPROCEEDINGS{Rainko:849694,
      author       = {Rainko, Denis and Stange, Daniela and von den Driesch, Nils
                      and Schulte-Braucks, Christian and Wirths, Stephan and
                      Mussler, Gregor and Ikonic, Zoran and Hartmann, Jean-Michel
                      and Luysberg, Martina and Mantl, Siegfried and Grützmacher,
                      Detlev and Buca, Dan Mihai},
      title        = {{S}tudy of {G}e{S}n/({S}i){G}e({S}n) {Q}uantum {S}tructures
                      for {L}ight {E}mitters},
      reportid     = {FZJ-2018-03830},
      year         = {2016},
      abstract     = {The ongoing growth of consumer electronics market, as well
                      as the demand for even more complex data and
                      telecommunication systems require energy-efficient
                      integrated circuits and data links [1]. One possibility to
                      tackle this challenge is to replace electrons with photons
                      for low-power on-chip and/or chip-to-chip data transfer [2].
                      Here, monolithically integrated, Si-based photonic devices
                      would be the most convenient solution due to the
                      accessibility to low-cost Si CMOS fabrication. Concerning
                      group IV based photonic integrated circuits (PIC), one major
                      disadvantage is their indirect bandgap nature, causing them
                      to be inefficient light emitters. Very recently, the
                      demonstration of a direct bandgap group IV laser based on
                      GeSn [3] represents a breakthrough in the field of group IV
                      photonics and opened the path towards fully integrated
                      electronic and photonic circuitry [4]. In this contribution,
                      we present theoretical studies as well as the growth and
                      thorough structural characterization of GeSn/(Si)Ge(Sn)
                      quantum-well and quantum dot structures that are suitable
                      for light emitting devices (i.e. LEDs). The heterostructures
                      were grown using a 200 mm industrial compatible AIXTRON
                      RPCVD reactor with showerhead technology employing growth
                      temperatures between 350 °C and 425 °C. Material
                      properties like the Sn concentration, crystalline quality
                      and strain were analyzed by RBS, TEM, XRD and SIMS.},
      month         = {Apr},
      date          = {2016-04-03},
      organization  = {SPIE Europe, Brüssel (Belgien), 3 Apr
                       2016 - 7 Apr 2016},
      cin          = {PGI-9 / JARA-FIT / PGI-5},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-5-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)1},
      url          = {https://juser.fz-juelich.de/record/849694},
}