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| 001 | 849694 | ||
| 005 | 20240610121318.0 | ||
| 024 | 7 | _ | |a 2128/19306 |2 Handle |
| 037 | _ | _ | |a FZJ-2018-03830 |
| 100 | 1 | _ | |a Rainko, Denis |0 P:(DE-Juel1)166341 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a SPIE Europe |c Brüssel |d 2016-04-03 - 2016-04-07 |w Belgien |
| 245 | _ | _ | |a Study of GeSn/(Si)Ge(Sn) Quantum Structures for Light Emitters |
| 260 | _ | _ | |c 2016 |
| 336 | 7 | _ | |a Abstract |b abstract |m abstract |0 PUB:(DE-HGF)1 |s 1531310806_26249 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a The ongoing growth of consumer electronics market, as well as the demand for even more complex data and telecommunication systems require energy-efficient integrated circuits and data links [1]. One possibility to tackle this challenge is to replace electrons with photons for low-power on-chip and/or chip-to-chip data transfer [2]. Here, monolithically integrated, Si-based photonic devices would be the most convenient solution due to the accessibility to low-cost Si CMOS fabrication. Concerning group IV based photonic integrated circuits (PIC), one major disadvantage is their indirect bandgap nature, causing them to be inefficient light emitters. Very recently, the demonstration of a direct bandgap group IV laser based on GeSn [3] represents a breakthrough in the field of group IV photonics and opened the path towards fully integrated electronic and photonic circuitry [4]. In this contribution, we present theoretical studies as well as the growth and thorough structural characterization of GeSn/(Si)Ge(Sn) quantum-well and quantum dot structures that are suitable for light emitting devices (i.e. LEDs). The heterostructures were grown using a 200 mm industrial compatible AIXTRON RPCVD reactor with showerhead technology employing growth temperatures between 350 °C and 425 °C. Material properties like the Sn concentration, crystalline quality and strain were analyzed by RBS, TEM, XRD and SIMS. |
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| 700 | 1 | _ | |a Stange, Daniela |0 P:(DE-Juel1)161180 |b 1 |u fzj |
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| 700 | 1 | _ | |a Schulte-Braucks, Christian |0 P:(DE-Juel1)161530 |b 3 |
| 700 | 1 | _ | |a Wirths, Stephan |0 P:(DE-Juel1)138778 |b 4 |
| 700 | 1 | _ | |a Mussler, Gregor |0 P:(DE-Juel1)128617 |b 5 |u fzj |
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| 700 | 1 | _ | |a Hartmann, Jean-Michel |0 P:(DE-HGF)0 |b 7 |
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| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 11 |u fzj |
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