000849695 001__ 849695
000849695 005__ 20210129234232.0
000849695 0247_ $$2doi$$a10.1021/acs.nanolett.7b04774
000849695 0247_ $$2ISSN$$a1530-6984
000849695 0247_ $$2ISSN$$a1530-6992
000849695 0247_ $$2pmid$$apmid:29425440
000849695 0247_ $$2WOS$$aWOS:000427910600020
000849695 0247_ $$2Handle$$a2128/20908
000849695 0247_ $$2altmetric$$aaltmetric:28940920
000849695 037__ $$aFZJ-2018-03831
000849695 082__ $$a540
000849695 1001_ $$0P:(DE-HGF)0$$aGoldsche, Matthias$$b0
000849695 245__ $$aTailoring Mechanically Tunable Strain Fields in Graphene
000849695 260__ $$aWashington, DC$$bACS Publ.$$c2018
000849695 3367_ $$2DRIVER$$aarticle
000849695 3367_ $$2DataCite$$aOutput Types/Journal article
000849695 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1554900156_30968
000849695 3367_ $$2BibTeX$$aARTICLE
000849695 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000849695 3367_ $$00$$2EndNote$$aJournal Article
000849695 520__ $$aThere are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micromachined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4%/μm. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.
000849695 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000849695 588__ $$aDataset connected to CrossRef
000849695 7001_ $$0P:(DE-Juel1)167238$$aSonntag, Jens$$b1
000849695 7001_ $$0P:(DE-HGF)0$$aKhodkov, Tymofiy$$b2
000849695 7001_ $$0P:(DE-HGF)0$$aVerbiest, Gerard Jan$$b3
000849695 7001_ $$0P:(DE-HGF)0$$aReichardt, Sven$$b4
000849695 7001_ $$0P:(DE-HGF)0$$aNeumann, Christoph$$b5
000849695 7001_ $$0P:(DE-HGF)0$$aOuaj, Taoufiq$$b6
000849695 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b7
000849695 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b8
000849695 7001_ $$0P:(DE-Juel1)142024$$aStampfer, Christoph$$b9$$eCorresponding author
000849695 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/acs.nanolett.7b04774$$gVol. 18, no. 3, p. 1707 - 1713$$n3$$p1707 - 1713$$tNano letters$$v18$$x1530-6992$$y2018
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/acs.nanolett.7b04774.pdf$$yRestricted
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/1711.04505.pdf$$yOpenAccess
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/acs.nanolett.7b04774.gif?subformat=icon$$xicon$$yRestricted
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/acs.nanolett.7b04774.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/acs.nanolett.7b04774.jpg?subformat=icon-180$$xicon-180$$yRestricted
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/acs.nanolett.7b04774.jpg?subformat=icon-640$$xicon-640$$yRestricted
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/acs.nanolett.7b04774.pdf?subformat=pdfa$$xpdfa$$yRestricted
000849695 8564_ $$uhttps://juser.fz-juelich.de/record/849695/files/1711.04505.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000849695 909CO $$ooai:juser.fz-juelich.de:849695$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000849695 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b0$$kRWTH
000849695 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)167238$$aForschungszentrum Jülich$$b1$$kFZJ
000849695 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b2$$kRWTH
000849695 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b3$$kRWTH
000849695 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b4$$kRWTH
000849695 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b5$$kRWTH
000849695 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-HGF)0$$aRWTH Aachen$$b6$$kRWTH
000849695 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b7$$kFZJ
000849695 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b8$$kFZJ
000849695 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)142024$$aForschungszentrum Jülich$$b9$$kFZJ
000849695 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000849695 9141_ $$y2018
000849695 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000849695 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000849695 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bNANO LETT : 2015
000849695 915__ $$0StatID:(DE-HGF)9910$$2StatID$$aIF >= 10$$bNANO LETT : 2015
000849695 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000849695 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000849695 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000849695 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000849695 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000849695 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000849695 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000849695 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000849695 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000849695 920__ $$lyes
000849695 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000849695 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000849695 980__ $$ajournal
000849695 980__ $$aVDB
000849695 980__ $$aI:(DE-Juel1)PGI-9-20110106
000849695 980__ $$aI:(DE-82)080009_20140620
000849695 980__ $$aUNRESTRICTED
000849695 9801_ $$aFullTexts