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@ARTICLE{Attiaoui:849696,
      author       = {Attiaoui, Anis and Wirths, Stephan and Blanchard-Dionne,
                      André-Pierre and Meunier, Michel and Hartmann, J. M. and
                      Buca, Dan and Moutanabbir, Oussama},
      title        = {{E}xtreme {IR} absorption in group {IV}-{S}i{G}e{S}n
                      core-shell nanowires},
      journal      = {Journal of applied physics},
      volume       = {123},
      number       = {22},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2018-03832},
      pages        = {223102 -},
      year         = {2018},
      abstract     = {Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an
                      emerging family of semiconductors with the potential to
                      impact group IV material-based devices. These semiconductors
                      provide the ability to independently engineer both the
                      lattice parameter and bandgap, which holds the premise to
                      develop enhanced or novel photonic and electronic devices.
                      With this perspective, we present detailed investigations of
                      the influence of Ge1-y-xSixSny layers on the optical
                      properties of Si and Ge based heterostructures and
                      nanowires. We found that by adding a thin Ge1-y-xSixSny
                      capping layer on Si or Ge greatly enhances light absorption
                      especially in the near infrared range, leading to an
                      increase in short-circuit current density. For the
                      Ge1-y-xSixSny structure at thicknesses below 30 nm, a
                      14-fold increase in the short-circuit current is observed
                      with respect to bare Si. This enhancement decreases by
                      reducing the capping layer thickness. Conversely, decreasing
                      the shell thickness was found to improve the short-circuit
                      current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell
                      nanowires. The optical absorption becomes very important by
                      increasing the Sn content. Moreover, by exploiting an
                      optical antenna effect, these nanowires show extreme light
                      absorption, reaching an enhancement factor, with respect to
                      Si or Ge nanowires, on the order of 104 in
                      Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12.
                      Furthermore, we analyzed the optical response after the
                      addition of a dielectric layer of Si3N4 to the
                      Si/Ge1-y-xSixSny core-shell nanowire and found
                      approximatively a $50\%$ increase in the short-circuit
                      current density for a dielectric layer of thickness equal to
                      45 nm and both a core radius and a shell thickness greater
                      than 40 nm. The core−shell optical antenna benefits from
                      a multiplication of enhancements contributed by leaky mode
                      resonances in the semiconductor part and antireflection
                      effects in the dielectric part.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000435445500002},
      doi          = {10.1063/1.5021393},
      url          = {https://juser.fz-juelich.de/record/849696},
}