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@INPROCEEDINGS{Stange:849698,
      author       = {Stange, D. and von den Driesch, N. and Zabel, T. and
                      Armand-Pilon, F. and Marzban, B. and Rainko, D. and
                      Hartmann, J.-M. and Capellini, G. and Schroeder, T. and
                      Sigg, H. and Witzens, J. and Grutzmacher, D. and Buca, D.},
      title        = {{R}educed threshold microdisk lasers from
                      {G}e{S}n/{S}i{G}e{S}n heterostructures},
      publisher    = {IEEE},
      reportid     = {FZJ-2018-03834},
      pages        = {15-16},
      year         = {2017},
      abstract     = {We present optically pumped lasing from group IV
                      GeSn/SiGeSn heterostructures. A comparison between double
                      heterostructure and multi-quantum-well microdisk cavities
                      reveals advantages of the multi-well design. Strongly
                      reduced lasing thresholds compared to values from bulk
                      devices are observed.},
      month         = {Aug},
      date          = {2017-08-23},
      organization  = {2017 IEEE 14th International
                       Conference on Group IV Photonics (GFP),
                       Berlin (Germany), 23 Aug 2017 - 25 Aug
                       2017},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/GROUP4.2017.8082173},
      url          = {https://juser.fz-juelich.de/record/849698},
}