Hauptseite > Publikationsdatenbank > Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures > print

001     849698
005     20210129234234.0
024 7 _ |a 10.1109/GROUP4.2017.8082173
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037 _ _ |a FZJ-2018-03834
100 1 _ |a Stange, D.
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111 2 _ |a 2017 IEEE 14th International Conference on Group IV Photonics (GFP)
|c Berlin
|d 2017-08-23 - 2017-08-25
|w Germany
245 _ _ |a Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures
260 _ _ |c 2017
|b IEEE
300 _ _ |a 15-16
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520 _ _ |a We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.
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700 1 _ |a von den Driesch, N.
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700 1 _ |a Zabel, T.
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700 1 _ |a Armand-Pilon, F.
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700 1 _ |a Rainko, D.
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700 1 _ |a Hartmann, J.-M.
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700 1 _ |a Capellini, G.
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700 1 _ |a Schroeder, T.
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700 1 _ |a Sigg, H.
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700 1 _ |a Witzens, J.
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700 1 _ |a Grutzmacher, D.
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700 1 _ |a Buca, D.
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