%0 Conference Paper
%A von den Driesch, Nils
%A Stange, Daniela
%A Rainko, Denis
%A Zaumseil, Peter
%A Capellini, Giovanni
%A Hartmann, Jean-Michel
%A Schroeder, Thomas
%A Mantl, Siegfried
%A Grutzmacher, Detlev
%A Buca, Dan Mihai
%T Epitaxy of direct bandgap group IV heterostructure lasers
%I IEEE
%M FZJ-2018-03835
%P 175-176
%D 2017
%X We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
%B 2017 IEEE 14th International Conference on Group IV Photonics (GFP)
%C 23 Aug 2017 - 25 Aug 2017, Berlin (Germany)
Y2 23 Aug 2017 - 25 Aug 2017
M2 Berlin, Germany
%F PUB:(DE-HGF)8
%9 Contribution to a conference proceedings
%R 10.1109/GROUP4.2017.8082253
%U https://juser.fz-juelich.de/record/849699