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000849699 1001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b0$$eCorresponding author
000849699 1112_ $$a2017 IEEE 14th International Conference on Group IV Photonics (GFP)$$cBerlin$$d2017-08-23 - 2017-08-25$$wGermany
000849699 245__ $$aEpitaxy of direct bandgap group IV heterostructure lasers
000849699 260__ $$bIEEE$$c2017
000849699 300__ $$a175-176
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000849699 520__ $$aWe demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
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000849699 7001_ $$0P:(DE-Juel1)166341$$aRainko, Denis$$b2$$ufzj
000849699 7001_ $$0P:(DE-HGF)0$$aZaumseil, Peter$$b3
000849699 7001_ $$0P:(DE-HGF)0$$aCapellini, Giovanni$$b4
000849699 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b5
000849699 7001_ $$0P:(DE-HGF)0$$aSchroeder, Thomas$$b6
000849699 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b7$$ufzj
000849699 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, Detlev$$b8$$ufzj
000849699 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b9
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