TY  - CONF
AU  - von den Driesch, Nils
AU  - Stange, Daniela
AU  - Rainko, Denis
AU  - Zaumseil, Peter
AU  - Capellini, Giovanni
AU  - Hartmann, Jean-Michel
AU  - Schroeder, Thomas
AU  - Mantl, Siegfried
AU  - Grutzmacher, Detlev
AU  - Buca, Dan Mihai
TI  - Epitaxy of direct bandgap group IV heterostructure lasers
PB  - IEEE
M1  - FZJ-2018-03835
SP  - 175-176
PY  - 2017
AB  - We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
T2  - 2017 IEEE 14th International Conference on Group IV Photonics (GFP)
CY  - 23 Aug 2017 - 25 Aug 2017, Berlin (Germany)
Y2  - 23 Aug 2017 - 25 Aug 2017
M2  - Berlin, Germany
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/GROUP4.2017.8082253
UR  - https://juser.fz-juelich.de/record/849699
ER  -