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@INPROCEEDINGS{vondenDriesch:849699,
      author       = {von den Driesch, Nils and Stange, Daniela and Rainko, Denis
                      and Zaumseil, Peter and Capellini, Giovanni and Hartmann,
                      Jean-Michel and Schroeder, Thomas and Mantl, Siegfried and
                      Grutzmacher, Detlev and Buca, Dan Mihai},
      title        = {{E}pitaxy of direct bandgap group {IV} heterostructure
                      lasers},
      publisher    = {IEEE},
      reportid     = {FZJ-2018-03835},
      pages        = {175-176},
      year         = {2017},
      abstract     = {We demonstrate epitaxial growth of direct bandgap group IV
                      GeSn/SiGeSn double heterostructures and multi quantum wells.
                      While both designs offer high structural quality and strong
                      light emission, multi quantum wells benefit from a smaller
                      number of defects at the active region.},
      month         = {Aug},
      date          = {2017-08-23},
      organization  = {2017 IEEE 14th International
                       Conference on Group IV Photonics (GFP),
                       Berlin (Germany), 23 Aug 2017 - 25 Aug
                       2017},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/GROUP4.2017.8082253},
      url          = {https://juser.fz-juelich.de/record/849699},
}