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001     849699
005     20210129234234.0
024 7 _ |a 10.1109/GROUP4.2017.8082253
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037 _ _ |a FZJ-2018-03835
100 1 _ |a von den Driesch, Nils
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111 2 _ |a 2017 IEEE 14th International Conference on Group IV Photonics (GFP)
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|d 2017-08-23 - 2017-08-25
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245 _ _ |a Epitaxy of direct bandgap group IV heterostructure lasers
260 _ _ |c 2017
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300 _ _ |a 175-176
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520 _ _ |a We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
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700 1 _ |a Capellini, Giovanni
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700 1 _ |a Hartmann, Jean-Michel
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