Conference Presentation (After Call)

FZJ-2018-03841

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters

von den Driesch, N. (Corresponding author)FZJ* ; Stange, D.FZJ* ; Rainko, D.FZJ* ; Povstugar, I.FZJ* ; Breuer, U.FZJ* ; Denneulin, T.FZJ* ; Capellini, G. ; Ikonic, Z. ; Hartmann, J.-M. ; Mantl, S.FZJ* ; Sigg, H. ; Witzens, J. ; Grützmacher, D.FZJ* ; Buca, D. M.FZJ*

2018

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Analytik (ZEA-3)
4. Mikrostrukturforschung (PGI-5)
5. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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