TY  - JOUR
AU  - Skaja, Katharina
AU  - Andrä, Michael
AU  - Rana, Vikas
AU  - Waser, Rainer
AU  - Dittmann, Regina
AU  - Baeumer, Christoph
TI  - Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
JO  - Scientific reports
VL  - 8
IS  - 1
SN  - 2045-2322
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2018-03945
SP  - 10861
PY  - 2018
AB  - In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window ROFF/RON was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.
LB  - PUB:(DE-HGF)16
C6  - pmid:30022129
UR  - <Go to ISI:>//WOS:000439026000022
DO  - DOI:10.1038/s41598-018-28992-9
UR  - https://juser.fz-juelich.de/record/849842
ER  -