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@ARTICLE{Grieb:850203,
      author       = {Grieb, Tim and Tewes, Moritz and Schowalter, Marco and
                      Müller-Caspary, Knut and Krause, Florian F. and Mehrtens,
                      Thorsten and Hartmann, Jean Michel and Rosenauer, Andreas},
      title        = {{Q}uantitative {HAADF} {STEM} of {S}i{G}e in presence of
                      amorphous surface layers from {FIB} preparation},
      journal      = {Ultramicroscopy},
      volume       = {184},
      number       = {Part B},
      issn         = {0304-3991},
      address      = {Amsterdam},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2018-04277},
      pages        = {29 - 36},
      year         = {2018},
      abstract     = {The chemical composition of four SiGex layers grown on
                      silicon was determined from quantitative scanning
                      transmission electron microscopy (STEM). The chemical
                      analysis was performed by a comparison of the high-angle
                      annular dark field (HAADF) intensity with multislice
                      simulations. It could be shown that amorphous surface layers
                      originating from the preparation process by focused-ion beam
                      (FIB) at 30 kV have a strong influence on the
                      quantification: the local specimen thickness is
                      overestimated by approximately a factor of two, and the
                      germanium concentration is substantially underestimated. By
                      means of simulations, the effect of amorphous surface layers
                      on the HAADF intensity of crystalline silicon and germanium
                      is investigated. Based on these simulations, a method is
                      developed to analyze the experimental HAADF-STEM images by
                      taking the influence of the amorphous layers into account
                      which is done by a reduction of the intensities by
                      multiplication with a constant factor. This suggested
                      modified HAADF analysis gives germanium concentrations which
                      are in agreement with the nominal values. The same TEM
                      lamella was treated with low-voltage ion milling which
                      removed the amorphous surface layers completely. The results
                      from subsequent quantitative HAADF analyses are in agreement
                      with the nominal concentrations which validates the
                      applicability of the used frozen-lattice based multislice
                      simulations to describe the HAADF scattering of SiGex in
                      STEM.},
      cin          = {ER-C-1},
      ddc          = {570},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29078105},
      UT           = {WOS:000417779800004},
      doi          = {10.1016/j.ultramic.2017.09.012},
      url          = {https://juser.fz-juelich.de/record/850203},
}