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@ARTICLE{Hlukhova:850675,
author = {Hlukhova, H. and Menger, M. and Offenhäusser, A. and
Vitusevich, S.},
title = {{H}ighly {S}ensitive {A}ptamer-{B}ased {M}ethod for the
{D}etection of {C}ardiac {B}iomolecules on {S}ilicon
{D}ioxide {S}urfaces},
journal = {MRS advances},
volume = {3},
number = {27},
issn = {2059-8521},
address = {Cambridge},
publisher = {Cambridge University Press},
reportid = {FZJ-2018-04483},
pages = {1535 - 1541},
year = {2018},
abstract = {In this work, we report on fabrication of the thin-films of
silicon oxide dielectric layers on silicon with back-side
contact and utilization of the structure to study the
detection of human Troponin antigen (cTnI) molecules: the
cardiac biomarkers for the early diagnosis of acute
myocardial infraction. Aptamers are selectively bound to the
target molecules and can block the binding epitope for
further reaction like immobilization or interaction to any
other molecules. In contrast to antibodies, the aptamers are
smaller in size, which allows target molecules to be brought
closer to the surface of the biosensor and, therefore, to
enhance the molecular signal. The target molecule in this
work is cTnI, which is located in the cardiac muscle tissue.
As a reliable indicator of heart failure and injury, it is
specifically considered for the diagnosis of myocardial
infarctions. The solutions of Troponin molecules were
studied in different concentrations range from 10 pg/μL to
1 ng/μL. For the electrical detection of cTnI, we used the
field-effect capacitive electrolyte-insulator-semiconductor
(EIS) technique, which is a robust method for the
quantitative characterization of molecular layers. The
measured values of capacitances and flat band voltages were
used to acquire information about the properties of the
molecular layers obtained using solutions with different
troponin concentrations. It was shown that this method
demonstrates high sensitivity to target cardiac biomolecules
and opens up new perspectives for highly selective and
sensitive cardiac biosensors developed on the basis of
silicon nanowire structures.},
cin = {ICS-8},
ddc = {670},
cid = {I:(DE-Juel1)ICS-8-20110106},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000432480200005},
doi = {10.1557/adv.2018.332},
url = {https://juser.fz-juelich.de/record/850675},
}