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@ARTICLE{Gunkel:850927,
      author       = {Gunkel, F. and Lenser, C. and Baeumer, C. and Borgatti, F.
                      and Offi, F. and Panaccione, G. and Dittmann, R.},
      title        = {{C}harge-transfer in {B}-site-depleted {N}d{G}a{O} 3
                      /{S}r{T}i{O} 3 heterostructures},
      journal      = {APL materials},
      volume       = {6},
      number       = {7},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2018-04658},
      pages        = {076104 -},
      year         = {2018},
      abstract     = {Cation stoichiometry has been identified as a major key in
                      establishing 2-dimensional electron gases (2DEGs) in oxide
                      heterostructures. Here, we discuss a 2DEG formation scenario
                      in B-site deficient perovskite/perovskite heterostructures,
                      which previously were predicted to show insulating behavior.
                      We elaborate an ionic picture based on
                      oxygen-vacancy-buffered B-site vacancy defects in the polar
                      oxide layer that yields a continuous transition from 2DEG
                      formation to less conducting interfaces to insulating
                      interfaces with increasing B-site deficiency.
                      Experimentally, a corresponding modulation of charge
                      transfer across NdGaO3/SrTiO3 interfaces is inferred using
                      hard x-ray photoelectron spectroscopy analysis and transport
                      experiments. With increasing B-site deficiency, we observe a
                      decrease of the interfacial Ti3+ core level contribution,
                      indicating a reduced charge transfer at the interface. This
                      result is corroborated by temperature-dependent transport
                      measurements, revealing increased low temperature
                      resistance, with a dominant influence of a reduced electron
                      density in the Ga-depleted sample. We consider a
                      redistribution of oxygen vacancies in the B-site deficient
                      polar oxide layer to explain the alleviated interface
                      reconstruction, adding a new perspective on potential
                      built-up in polar-oxide thin films.},
      cin          = {PGI-7 / IEK-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)IEK-1-20101013},
      pnm          = {144 - Controlling Collective States (POF3-144) / SOFC -
                      Solid Oxide Fuel Cell (SOFC-20140602)},
      pid          = {G:(DE-HGF)POF3-144 / G:(DE-Juel1)SOFC-20140602},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000440603600006},
      doi          = {10.1063/1.5038773},
      url          = {https://juser.fz-juelich.de/record/850927},
}