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| 001 | 850927 | ||
| 005 | 20240711085703.0 | ||
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| 037 | _ | _ | |a FZJ-2018-04658 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Gunkel, F. |0 P:(DE-Juel1)130677 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Charge-transfer in B-site-depleted NdGaO 3 /SrTiO 3 heterostructures |
| 260 | _ | _ | |a Melville, NY |c 2018 |b AIP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Cation stoichiometry has been identified as a major key in establishing 2-dimensional electron gases (2DEGs) in oxide heterostructures. Here, we discuss a 2DEG formation scenario in B-site deficient perovskite/perovskite heterostructures, which previously were predicted to show insulating behavior. We elaborate an ionic picture based on oxygen-vacancy-buffered B-site vacancy defects in the polar oxide layer that yields a continuous transition from 2DEG formation to less conducting interfaces to insulating interfaces with increasing B-site deficiency. Experimentally, a corresponding modulation of charge transfer across NdGaO3/SrTiO3 interfaces is inferred using hard x-ray photoelectron spectroscopy analysis and transport experiments. With increasing B-site deficiency, we observe a decrease of the interfacial Ti3+ core level contribution, indicating a reduced charge transfer at the interface. This result is corroborated by temperature-dependent transport measurements, revealing increased low temperature resistance, with a dominant influence of a reduced electron density in the Ga-depleted sample. We consider a redistribution of oxygen vacancies in the B-site deficient polar oxide layer to explain the alleviated interface reconstruction, adding a new perspective on potential built-up in polar-oxide thin films. |
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| 773 | _ | _ | |a 10.1063/1.5038773 |g Vol. 6, no. 7, p. 076104 - |0 PERI:(DE-600)2722985-3 |n 7 |p 076104 - |t APL materials |v 6 |y 2018 |x 2166-532X |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/850927/files/Charge-transfer%20in%20B-site-depleted%20NdGaO3SrTiO3%20heterostructures.pdf |
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