TY  - JOUR
AU  - Glass, Stefan
AU  - Kato, Kimihiko
AU  - Kibkalo, Lidia
AU  - Hartmann, Jean-Michel
AU  - Takagi, Shinichi
AU  - Buca, Dan Mihai
AU  - Mantl, Siegfried
AU  - Qing-Tai, Zhao
TI  - A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
JO  - IEEE journal of the Electron Devices Society
VL  - 6
SN  - 2168-6734
CY  - [New York, NY]
PB  - IEEE
M1  - FZJ-2018-04729
SP  - 1070 - 1076
PY  - 2018
AB  - In this combined experiment and simulation study we investigate a SiGe/Si based gatenormal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is improved electrostatics at the boundary of the tunneling junction which helps to diminish the influence of adverse tunneling paths, and thus, substantially sharpens the device turn on. The second, is a simplified fabrication of a dual-metal gate using a selfaligned process. We demonstrate the feasibility of the process and show the positive effect of a dual-metal gate in experiment. Overall the paper provides general guidelines for the improvement of the subthreshold swing in gate-normal TFETs which are not restrained to the material system.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000443963500017
DO  - DOI:10.1109/JEDS.2018.2864581
UR  - https://juser.fz-juelich.de/record/851015
ER  -