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@ARTICLE{Lpke:851186,
      author       = {Lüpke, Felix and Just, Sven and Eschbach, Markus and
                      Heider, Tristan and Młyńczak, Ewa and Lanius, Martin and
                      Schüffelgen, Peter and Rosenbach, Daniel and von den
                      Driesch, Nils and Cherepanov, Vasily and Mussler, Gregor and
                      Plucinski, Lukasz and Grützmacher, Detlev and Schneider,
                      Claus M. and Tautz, F. Stefan and Voigtländer, Bert},
      title        = {{I}n situ disentangling surface state transport channels of
                      a topological insulator thin film by gating},
      journal      = {npj quantum materials},
      volume       = {3},
      number       = {1},
      issn         = {2397-4648},
      address      = {[London]},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2018-04886},
      pages        = {46},
      year         = {2018},
      abstract     = {In the thin film limit, the surface state of a
                      three-dimensional topological insulator gives rise to two
                      parallel conduction channels at the top and bottom surface
                      of the film, which are difficult to disentangle in transport
                      experiments. Here, we present gate-dependent multi-tip
                      scanning tunneling microscope transport measurements
                      combined with photoemission experiments all performed in
                      situ on pristine BiSbTe<sub>3</sub> thin films. To analyze
                      the data, we develop a generic transport model including
                      quantum capacitance effects. This approach allows us to
                      quantify the gate-dependent conductivities, charge carrier
                      concentrations, and mobilities for all relevant transport
                      channels of three-dimensional topological insulator thin
                      films (i.e., the two topological surface state channels, as
                      well as the interior of the film). For the present sample,
                      we find that the conductivity in the bottom surface state
                      channel is minimized below a gate voltage of
                      V<sub>gate</sub> = −34 V and the top surface state
                      channel dominates the transport through the film.},
      cin          = {PGI-3 / PGI-9 / PGI-6 / JARA-SIM / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106 / I:(DE-Juel1)PGI-9-20110106 /
                      I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)VDB1045 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000449705100001},
      doi          = {10.1038/s41535-018-0116-1},
      url          = {https://juser.fz-juelich.de/record/851186},
}