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@ARTICLE{Liang:851305,
      author       = {Liang, Sijia and Dai, Yang and von Helden, L. and
                      Schwarzkopf, J. and Wördenweber, R.},
      title        = {{S}urface acoustic waves in strain-engineered
                      {K}0.7{N}a0.3{N}b{O}3 thin films},
      journal      = {Applied physics letters},
      volume       = {113},
      number       = {5},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2018-04995},
      pages        = {052901 -},
      year         = {2018},
      abstract     = {Epitaxial K0.7Na0.3NbO3 thin films are grown via
                      metal-organic chemical vapor deposition on (110)-oriented
                      TbScO3. The films are strained due to the substrate–film
                      lattice mismatch and therefore exhibit a strong and
                      anisotropic modification of all its ferroelectric
                      properties. The compressive in-plane strain leads to a
                      reduction of the ferroelectric transition temperature from
                      approximately 700 K for unstrained K0.7Na0.3NbO3 to
                      324 K and 330 K with maximum permittivities of 10 270
                      and 13 695 for the main crystallographic directions
                      [001]TSO and [110]TSO, respectively. Moreover, the quite
                      thin films (approx. 30 nm thick) exhibit very large
                      piezoelectric properties. For instance, surface acoustic
                      waves with intensities of up to 4.7 dB are recorded for
                      wave propagation along the [110]TSO direction. The signal is
                      smaller (up to 1.3 dB) along [001]TSO, whilst for the
                      intermediate direction [112]TSO, the signal seems to vanish
                      (<0.1 dB). The results indicate that the choice of
                      material, (K,Na)NbO3, in combination with strain-engineering
                      via epitaxial growth onto lattice-mismatched substrates
                      represents a promising way to optimize ferroelectric
                      materials for piezoelectric thin-film applications.},
      cin          = {ICS-8 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ICS-8-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000440813000019},
      doi          = {10.1063/1.5035464},
      url          = {https://juser.fz-juelich.de/record/851305},
}