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@ARTICLE{Czaja:851556,
author = {Czaja, Philippe and Celino, Massimo and Giusepponi, Simone
and Gusso, Michele and Aeberhard, Urs},
title = {{A}b initio study on localization and finite size effects
in the structural, electronic, and optical properties of
hydrogenated amorphous silicon},
journal = {Computational materials science},
volume = {155},
issn = {0927-0256},
address = {Amsterdam [u.a.]},
publisher = {Elsevier Science},
reportid = {FZJ-2018-05181},
pages = {159 - 168},
year = {2018},
abstract = {We present a first-principles study of the structural,
electronic, and optical properties of hydrogenated amorphous
silicon (a-Si:H). To this end, atomic configurations of
a-Si:H with 72 and 576 atoms respectively are generated
using ab initio molecular dynamics, where the larger
structures are defect free, closely matching the
experimental situation and enabling the comparison of the
electronic and optical properties with experimental results.
Density functional theory calculations are applied to both
configurations in order to obtain the electronic wave
functions. These are analyzed and characterized with respect
to their localization and their contribution to the density
of states, and are used for calculating ab initio absorption
spectra of a-Si:H. The results show that both the size and
the defect structure of the configurations modify the
electronic and optical properties and in particular the
value of the band gap. This value could be improved by
calculating quasi-particle (QP) corrections to the
single-particle spectra using the G0W0 method. We find that
the QP corrections can be described by a set of scissors
shift parameters, which can also be used in calculations of
larger structures. The analysis of individual contributions
to the absorption by evaluating the optical matrix elements
indicates that strong localization enhances the optical
coupling, but has little effect on the average transition
probability , for which we find a dependence on the photon
energy E, irrespective of the nature of the initial or final
state.},
cin = {IEK-5 / JARA-HPC},
ddc = {530},
cid = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
pnm = {121 - Solar cells of the next generation (POF3-121) /
Ab-initio description of charge carrier dynamics at
defective interfaces in solar cells $(jiek50_20171101)$},
pid = {G:(DE-HGF)POF3-121 / $G:(DE-Juel1)jiek50_20171101$},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000447748900019},
doi = {10.1016/j.commatsci.2018.08.027},
url = {https://juser.fz-juelich.de/record/851556},
}